High Voltage Withstand in a Compact Design
The G3VH series combines high load voltages with low turn-on resistance and fast switching performance. The insulation voltage between the input and output is 5,000 Vrms. This makes the relay particularly suitable for high-voltage DC applications and testing modern power semiconductors. Compared to conventional MOSFET relays, this series enables higher switching voltages. Compared to reed relays, the focus is on a more compact design and the high reliability of the semiconductor solution.
The combination of high insulation performance and fast switching is particularly attractive to developers of ATE and measurement systems. This feature supports precise fault and conformance detection and can shorten test times. Thanks to its wear-free semiconductor design, the relay is ideal for long-lasting, low-maintenance systems. The DIP6 package measures just 8.8 × 6.4 mm and is available with PCB or SMD terminals.
Key features:
• SiC-based MOSFET relay
• Load voltage: 1,800 V or 3,300 V
• Input/output isolation voltage: 5,000 Vrms
• Low on-resistance
• Fast switching
• DIP6 package with PCB or SMD terminals
From semiconductor testing to energy storage, key application areas include:
- Automatic test equipment (ATE) for power semiconductors
- Test and measurement equipment
- Battery management systems (BMS)
- Electric vehicles and high-voltage vehicle electrical systems
- Energy storage and energy infrastructure
- Industrial automation and mechanical engineering
- Railway technology
Especially for applications above 1,000 V, the G3VH series addresses the need to combine high voltages with compact dimensions and long switching cycles.
| For more information on the G3VH SiC-MOSFETs from OMRON and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com. |
Contact Rutronik:
| Norman Majer | Corporate Product Manager Mechatronics | +49 7231 801 4833 | Norman.Majer@rutronik.com |