ROHM has the entire manufacturing know-how for SiC MOSFETs, provides substrate, wafer, packaging, and testing from a single source and, in addition to the discrete SiC MOSFETs, also offers corresponding modules and driver components as well as half-bridge evaluation boards.
The P04SCT4018KE-EVK-001 and P05SCT4018KR-EVK-001 half-bridge evaluation boards were developed for Gen 4 SiC MOSFETs in compact TO-247N and TO-247-4L housings and support the rapid implementation of new applications during development. Integrated gate drivers and peripheral circuits reduce the workload for design and evaluation.
The HB2637L-EVK-301 evaluation board enables evaluations in operating modes such as downward, upward, synchronous downward/upward, and inverter operation. It integrates two SiC MOSFETs, an isolated gate driver including power supply, a low dropout regulator (LDO) for a 5 V supply, and easy-to-connect ports for pulse width modulation (PWM) signals.
The BM61M41RFV-C gate driver has an isolation voltage of 3,750 Vrms, an I/O delay time of just 65 ns and a minimum input pulse width of 60 ns. It is galvanically isolated and equipped with Under-Voltage-Lockout (UVLO), and the Miller clamping function. The component is AEC-Q100 qualified and UL1577 recognized.
The SiC MOSFETs benefit from the improvement of the component structure based on the original double-trench design. Thus, it achieves up to 40 % lower on-resistance with significantly higher robustness compared to similar components. By drastically reducing parasitic effects such as the gate-drain capacitance, switching losses are reduced by up to 50 %.
In contrast to the third generation SiC MOSFETs, the fourth generation supports a more flexible gate voltage range of 15 V to 18 V. This enables the development of a gate driver circuit that can also be used for insulated-gate bipolar transistors (IGBT) at high currents. The components can withstand a thermal load of up to +175 °C, and can be easily connected and controlled in parallel.
They are lead-free and RoHS-compliant and ideal for use in automotive, industrial, or new energy applications, as well as in all future markets.
Benefits at a glance:
- High short-circuit resistance
- Minimized switching loss
- Supports 15 V - 18 V gate-source voltage
- Reliable performance at temperatures up to +175 °C
Application examples:
- Electric vehicles
- Chargers and DC/DC converters
- Photovoltaic inverters
- Industrial drives
- Aerospace technology
For more information to the 4th Gen SiC-MOSFETs with supporting gate drivers and evaluation boards by ROHM and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com. |
Contact Rutronik:
| Ralf Kern | Line Manager | +49 7231 801 1677 | ralf.kern@rutronik.com |