To support developers in designing customized control units, DSL uses Bosch’s own SiC chips with second-generation dual-channel SiC trench gate technology. These are available as bare die in addition to the package variant. The compact DSL with integrated Kelvin source pin is designed for maximum scalability and offers a 750 V variant in addition to the 1,200 V class for different system voltages in the e-mobility environment.
The combination of high scalability in a small footprint, thermal robustness and AEC-Q101 qualification makes the BT2M12006R0TPA the ideal choice for next-generation electric drive and vehicle applications.
Benefits at a glance:
- Drain-source voltage: 1,200 V
- Typical on-resistance (RDS(on)): 6.2 mΩ at 140 A / 25 °C
- Power dissipation: up to 1,011 W
- Fast recovery
- Switching times: e.g. turn-on delay 183 ns, rise time 55 ns
- Gate charge (QG): 389 nC (typ.)
Target application:
- Automotive
- Traction applications
- On-board chargers
- DC/DC converters
- Electronic Battery Disconnect Unit (eBDU)
- Inverters