Gallium nitride HEMTs (GaN HEMTs) are considered a key technology for the miniaturization and efficiency enhancement of power electronics. Thanks to their intrinsic material advantages—such as high electron mobility, low gate charge, and low parasitic capacitances—they enable significantly higher switching frequencies compared to silicon-based MOSFETs.
These properties result in substantially reduced switching losses, lower heat generation, and allow the use of smaller passive components such as inductors and capacitors. The outcome is more compact designs with higher power density and improved energy efficiency.
Although individual GaN components are still more expensive than conventional silicon MOSFETs, they offer clear economic advantages at the system level: reduced cooling requirements, lower material usage, and simplified system architectures often lead to lower total system costs.
Technological platform for highly dynamic power applications
The RAK-GaN has been specifically designed as a system platform for demanding power applications. At its core is the PSOC™ Control microcontroller family based on an Arm® Cortex®-M33, which is optimized for digital power control and motor control.
Features such as high-resolution PWM (<100 ps), fast analog-to-digital converters (12 MSPS) with synchronous sampling, and integrated high-speed comparators (<10 ns) enable precise implementation of highly dynamic control algorithms. This is complemented by hardware accelerators such as CORDIC and a low-latency trigger architecture, ensuring deterministic control even at very high switching frequencies.
In combination with the integrated GaN HEMTs, this opens up new possibilities for high-frequency switching concepts. The kit supports both 48 V three-phase BLDC/PMSM motor drives and DC-DC buck converters. At the same time, integrated protection features such as inrush current protection, hardware-based overcurrent detection, and precise current sensing using advanced TMR sensors from Infineon ensure safe and robust system design.
Holistic approach: From evaluation to system solution
With the RAK-GaN, Rutronik follows a consistent system-level approach. The kit integrates components from leading manufacturers within the Rutronik linecard and enables seamless integration into existing development environments. Extensive interfaces, flexible measurement points, and expansion options—including Arduino-compatible boards—facilitate rapid prototyping and design validation.
“GaN is a key enabler for the next generation of efficient power electronics. With the RAK-GaN, we not only provide our customers with access to this technology, but also with a well-thought-out system platform that allows innovative concepts to be quickly evaluated and translated into market-ready solutions,” says Stephan Menze, Head of Global Innovation Management at Rutronik.
Broad application range in high-growth markets
The Application Kit addresses a wide range of target markets where efficiency and power density are becoming increasingly important. These include in particular:
- Industrial automation (e.g., servo drives, robotics, AGVs)
- Renewable energy (solar inverters, energy storage systems, EV charging infrastructure)
- E-mobility and 48 V systems
- Server and telecommunications power supplies
- Smart home and home appliances
With the RAK-GaN, Rutronik bridges the gap between innovative semiconductor technology and application-oriented system development—helping customers to leverage the full potential of GaN early and efficiently in market-ready designs.
Further information on the Rutronik Application Kit RAK-GaN is available at www.rutronik.com.