Technology Leadership Extended
Infineon, the leader in power, adds GaN to its portfolio
Infineon is uniquely positioned in the power semiconductor market, mastering all power technologies from silicon (Si) like CoolMOS™ SJ MOSFETs and IGBTs to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Its CoolGaN™ devices will significantly enhance designer's ability to deliver the compact, high performance power systems of the future.
Take now the opportunity to discover Infineon's newly launched portfolio of CoolGaN™ switches in SMD packages. Perfectly combinable with dedicated single-channel functional and reinforced isolated GaN EiceDRIVER™ IC parts. Enter a new era of efficiency with Infineon.
Why GaN from Infineon? (4 pillars of success)
What turns Infineon into your best choice when it comes to GaN based solutions?
The four pillars of success that make the difference:
Infineon is in the unique position to fully own the whole supply chain (incl. high volume fab for economies of scale) and to have all currently available semiconductor technologies on offer (Si, SiC, GaN, GaN-on-Si). Customers receive unbiased advice and offers tailored to their needs and their application profiles.
1. Extensive system expertise
- Extensive application system understanding
- GaN enables next level of efficiency and power density
- Focus on system performance/cost ratio
- GaN-on-Si for price competitiveness
- Global application design support
2. Unique power technology portfolio
- Expertise in all leading power technologies (Si, SiC, GaN, GaN-on-Si)
- Huge and substantial IP portfolio and strong GaN patent portfolio
3. Application-dedicated products
- Comprehensive power portfolio ensures best fit every time (Si, SiC and GaN)
- GaN product portfolio optimized for application- specific requirements
- GaN-based chips available as bare dies and in high-performing SMD packaging
- Line-up: Combination of switch and driver allows for ease-of-use
4. Benchmark in manufacturing
- Cooperation with partners to ensure quality and delivery
- GaN-on-Si e-mode HEMT technology through dual-source offerings with licensed partners
- No compromising on quality
- First GaN switches in SMD packages with fully owned supply chain
CoolGaN™ 600V E-mode HEMTs - Key Features & Benefits (Highest Efficiency & Density Levels in SMPS)
Infineon's CoolGaN™ is the most reliable and highly qualified GaN solution currently available in the market and offers a predicted lifetime of more than 15 years, with a failure rate less than 1Fit. With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance enabling rugged and reliable systems at an attractive overall system cost.
The e-mode concept is a single-chip solution and hence facilitates further integration either on the chip or package level. Infineon brought its enhancement mode concept to the maturity, required for demanding applications, delivering at the same time the highest performance among all available GaN HEMTs.
GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. Infineon's CoolGaN™ 600V impresses with highest PFC efficiency (>99.3% for 2.5kW PFC) and highest density for same efficiency (>160W/in3 for 3.6kW LLC with >98% efficiency).
The CoolGaN™ portfolio is built around high performing bottom- and top-side cooling SMD packages supporting high frequency operations. Lower parasitics and good thermal performance guarantee to fully exploit the benefits of GaN.
Infineon's qualification plan for its GaN switches follows a dedicated approach well beyond Si standards (e.g. JEDEC) thereby setting the next level of wide bandgap quality. Application profiles (incl. most stringent and challenging applications requiring +15 years lifetime, e.g. server / telecom) are an integral part of the qualification. Failure models - based on accelerated test conditions - ensure that in the field a target lifetime and quality are met.
Target applications: servers, hyperscale datacenters, telecom, wireless charging, chargers, adapters, SMPS
Key Features:
- Best FOM of 600V power devices
- Excellent for hard and soft switching topologies
- Optimized for turn-on and turn-off
- Zero reverse recovery charge
- The cutting-edge technology for innovative solutions and high volumes
Compared to Si technology:
- 10x higher breakdown field and 2x higher mobility
- 10x lower output charge
- 10x lower gate charge and linear Coss characteristic
Key Benefits
- Highest efficiency for SMPS; excellent efficiency in resonant circuits
- Highest power density enables small and light designs
- Surface mount (SMD) packaging ensures that switching capabilities of GaN are fully accessed
- Easy to use thanks to a compelling driver IC portfolio
- Very low RDS(on) and large cost-down potential
- New topologies and current modulation
- Fast (and nearly lossless) switching
Roadmap
Soon to come: CoolGaN™ 400V – a solution tailored for class D audio amplifiers. What else is in the pipeline? Take a look at the CoolGaN™ roadmap:
CoolGaN™ 600V E-mode HEMTs Product Portfolio
|
RDS(on) max. |
DSO-20-85 Bottom-side cooling |
DSO-20-87 Top-side cooling |
HSOF-8-3 (TO-leadless) |
DFN 8x8 |
*Standard grade **Coming soon |
|
35mΩ |
IGO60R035D1** |
IGOT60R035D1** |
IGT60R035D1** |
||
|
70mΩ |
|||||
|
190mΩ |
IGT60R190D1** |
IGLD60R190D1** |
|||
|
340mΩ |
IGLD60R340D1** |
GaN EiceDRIVER™ ICs - Key Features & Benefits (Single-Channel Galvanically-isolated Gate Drivers for Enhancement Mode GaN HEMTs)
Every high-voltage GaN switch needs a dedicated driver IC to benefit from:
- negative gate-driver voltage -> protection against spurious turn-on
- two off-voltage levels -> least dead-time losses
- excellent timing accuracy -> best system efficiency
- constant switching transients -> least R&D effort
- best robustness
- reduced driver complexity and no need of customized drivers
High Voltage GaN Driving
Infineon's newly launched GoolGaN™ switches portfolio is easy-to-use thanks to a perfectly matching gate driver IC portfolio. By introducing the GaN EiceDRIVER™ family Infineon extends its range of one-channel galvanically-isolated gate driver ICs. The new components with high gate current for fast turn-on and robust gate-drive topology have been developed to optimize the performance of enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage. Resulting, driver complexity has been significantly reduced (medium effort for design-in) as no more customized drivers are needed.
Target applications: high-voltage bridgeless totem-pole PFC stages and high-voltage resonant LLC stages in telecom and server SMPS, active-clamping flybacks in AC adapters, three-phase motor drives, class E wireless charging, class D audio amplifiers.
Key Features:
- Output impedance:
- RDS(on) source - 0.85Ω
- RDS(on) sink - 0.35Ω
- Input-output propagation delay accuracy: -6ns / +7ns
- CMTI: > 150V/ns
- Galvanic isolation
- Package:
- 1EDF5673K: 13pin LGA 5x5mm
- 1EDF5673F: 16pin DSO 150mil
- 1EDS5663H: 16pin DSO 300mil
- Placement:
- Totem-pole PFC
- Resonant LLC
- Pace: 18ns minimum output pulse-width
- Precision: 13ns propagation delay window
- Negative gate drive voltage for the 1st pulse
Key Benefits:
- Complete support of all requirements specific to enhancement GaN HEMTs operation
- Switching behavior independent from duty cycle
- Integrated galvanic isolation for
- High power density of the application design
- Excellent system-level timing accuracy
- Robust common mode transient immunity (CMTI)
High-efficiency GaN switched mode power supply (SMPS)
GaN EiceDRIVER™ Product Portfolio
|
Package |
Isolation Class |
Rating |
Surge Testing |
Certification |
Propagation Delay Accuracy |
Typ. High level (Sourcing) Output Resistance |
Typ. Low level (Sinking) Output Resistance |
|
|
13pin LGA 5x5mm |
functional |
VIO = 1.5kVDC |
n.a. |
n.a. |
-6ns /+7ns |
0.85Ohm |
0.35Ohm |
|
|
16pin DSO 150mil |
functional |
VIO = 1.5kVDC |
n.a. |
n.a. |
-6ns /+7ns |
0.85Ohm |
0.35Ohm |
|
|
16pin DSO 300mil |
functional |
VIOTM = 8kVpk VISO = 5.7kVrms |
VISOM > 10kVpk |
VDE0884-10, UL1577 |
-6ns /+7ns |
0.85Ohm |
0.35Ohm |
Boards (Infineon’s Recommended Reference Designs and Evaluation-kits for Thorough Testing)
CoolGaN™ 600V E-mode HEMTs related:
Board name & key components
EVAL_2500W_PFC_GAN_A
2500W full-bridge totem-pole power factor correction evaluation board
Infineon board components:
- CoolGaN™ 600V e-mode HEMTs (IGO60R070D1)
- 650V CoolMOS™ C7 Gold SJ MOSFET (IPT65R033G7)
- EiceDRIVER™ 1EDI Compact (1EDI20N12AF and 1EDI60N12AF)
- EiceDRIVER™ 2EDN (2EDN7524F)
- Quasi-resonant CoolSET™ (ICE2QR2280G)
- CCM PFC controller (ICE3PCS01G)
Description & Target Applications
This 2.5kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon's CoolGaN™ technology to boost system efficiency above 99% for efficiency-critical applications such as server power supplies or telecom rectifiers. The board features CoolGaN™ 600V e-mode HEMTs, CoolMOS™ C7 Gold superjunction MOSFET and EiceDRIVER™ ICs.
Target applications: SMPS, Server PSU and telecom rectifiers
Key Features & Benefits
- Flat efficiency >99% over wide load range
- Suitable reference design for high efficiency, high power density server PSU and telecom rectifiers
- Highest efficiency with similar system BOM costs as of the next best Si-based alternatives for PFC topologies
EVAL_1EDF_G1_HB_GAN
CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
Infineon board components:
- CoolGaN™ 600V e-mode HEMTs (IGOT60R070D1)
- GaN EiceDRIVER™ (1EDF5673K)
This 600V GaN half-bridge evaluation platform enables easy, rapid setup and test of Infineon's CoolGaN™ transistors and GaN EiceDRIVER™ ICs. The generic topology can be configured for boost or buck operation, pulse testing or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope, to measure the switching performance of CoolGaN™ transistors and gate driver. This board saves the user from having to design their own gate driver and power circuit to evaluate GaN transistors."
Target Application: none specific -> platform to evaluate GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications
- Simple GaN half-bridge with dedicated GaN driver ICs
- Capable of multi-MHz switching frequencies
- Zero reverse-recovery - can shift between hard or soft-switching
- GaN transistors feature topside cooling for high power dissipation
- Easy setup and use
- Multiple configurations possible
- Evaluate high-frequency capabilities of GaN
- Evaluate waveforms with low ringing, overshoot, EMI
- Enables easy evaluation at multi-kilowatt power levels
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