Infineon's CoolGaN™ is the most reliable and highly qualified GaN solution currently available in the market and offers a predicted lifetime of more than 15 years, with a failure rate less than 1Fit. With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance enabling rugged and reliable systems at an attractive overall system cost.
The e-mode concept is a single-chip solution and hence facilitates further integration either on the chip or package level. Infineon brought its enhancement mode concept to the maturity, required for demanding applications, delivering at the same time the highest performance among all available GaN HEMTs.
GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. Infineon's CoolGaN™ 600V impresses with highest PFC efficiency (>99.3% for 2.5kW PFC) and highest density for same efficiency (>160W/in3 for 3.6kW LLC with >98% efficiency).
The CoolGaN™ portfolio is built around high performing bottom- and top-side cooling SMD packages supporting high frequency operations. Lower parasitics and good thermal performance guarantee to fully exploit the benefits of GaN.