For DC EV charging designs up to 150kW, Infineon’s discrete products offer the best price/performance ratio. These include the 600V CoolMOS™ SJ MOSFET P7 and CFD7 families, 650V IGBT TRENCHSTOP™ 5 and 1200V CoolSiC™ MOSFET. Infineon’s CoolMOS™ and CoolSiC™ MOSFETs matchless advantages include high frequency operation, high power density and reduced switching losses, allowing you to reach high levels of efficiency in any battery charging system. Infineon’s portfolio of high voltage switches is complimented by 650V and 1200V CoolSiC™ Schottky diodes. Since every switch needs a driver, and every driver needs to be controlled, they also offer the matching EiceDRIVER™ gate driver as well as XMC™ and AURIX™ microcontrollers for EV charging designs. OPTIGA™ products complete the portfolio and ensure data protection and security. Chargers in the power range above 50kW are typically built with IGBTs CoolSiC™ MOSFETs and diode power modules, e.g. CoolSiC™ Easy Modules, IGBT EconoPACK™ and the IGBT EconoDUAL™ family. Charger piles with a capacity of more than 100kW are usually built in a modular approach with stacked sub-units. Already today, these sub-units have reached a capacity of 20-50kW each and will go beyond this in future designs.