Parallel connection of multiple devices becomes unnecessary: The new StrongIRFET™ 2 power MOSFETs in 80 V and 100 V are the latest generation of Infineon‘s MOSFET technology for a wide range of applications and are suitable for both low and high switching frequencies. This new technology offers 40 percent improved RDS(on) and over 50 percent lower gate charge (Qg) compared to previous StrongIRFET™ devices....
Being the manufacturer with the largest portfolio, Infineon offers low power MOSFETs with broad product availability, convenience of choice, and ease of design. The selected portfolio of low power MOSFETs offers simple and price-competitive solutions that have wide availability and established quality. The portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs as well as...
2D SLC NAND is currently still the reigning champion when it comes to interchangeable storage media. But the 43nm generation will soon be discontinued, and smaller 24nm structures will suffer the same fate in the medium term, so developers should start looking at possible alternatives.
It doesn‘t get much more efficient than this: the compact, highly integrated SiP nRF9160 enables the straightforward implementation of low-power LTE technology and offers advanced processing and security functions for a variety of single-device with low-power designs for the cellular IoT. With the latest release, Nordic‘s already highly efficient system-in-package becomes up to 91 percent more power...
The Fourth Industrial Revolution is defined by how information is fed into or acquired from production processes. Real-time support plays a critical role in this. Time Sensitive Networking (TSN) provides standardized methods for providing such support.