The CIPOS Maxi SiC IPM features an improved 6-channel 1200 V gate driver based on silicon-on-insulator (SOI) technology and six CoolSiC™ MOSFETs, increasing system reliability.
Excellent performance with the smallest size
The DIP 36x23D is the smallest package for 1200 V IPMs. At the same time, the IPM has a particularly high power density in this voltage class. This combination allows the CIPOS Maxi SiC IPM to meet EMI requirements, provide overload protection for even the most demanding designs, be extremely flexible in use, and help reduce system costs.
The SiC power module’s resilient 6-channel SOI gate driver thanks to an integrated dead time avoids damage from transients. Additional undervoltage protection (UVLO) on all channels as well as protection functions against overcurrent shutdown round off the safety measures. These are supplemented by an independent UL-certified thermistor for temperature monitoring.
Particularly user-friendly thanks to simple design, evaluation and controller boards.
The IPM also impresses with its simple control system, in which the pins of the low-side emitters are accessible for phase current monitoring. In addition, there is a programmable fault clearing time and an enable input. Thanks to the precisely matched evaluation and controller boards, handling and development time can also be noticeably optimized.
For more information about Infineon´s CIPOS™ Maxi SiC IPM IM828 series and a direct
ordering option, please visit our e-commerce platform at www.rutronik24.com.
Mirko Vogelman, Product Sales Manager Power
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