GaN-FETs are increasingly finding use as next-generation, high-power devices for power electronics systems. They convince through superior performance, lower losses and higher switching speeds. To be able to use these advantages, suitable converters are necessary. GaN drivers require power supplies with an insulation barrier that can cope with the high switching voltages, high operating temperatures and fast slew rates.
The RP-xx06S series from Recom come with a pot-core, that physically separates the input and output windings providing up to 6.4kV/DC isolation. This way, the isolation barrier stands up to even the harshest operating conditions. Thus, they are ideally suited for GaN devices in higher frequency telecom and aerospace applications. The converters have an output voltage of +6V which is ideal to efficiently switch GaN HEMTs (High Electron Mobility Tranistors) without causing a gate dielectric breakdown.
Despite the high isolation grade, they fit into an industry standard SIP7 case, thus saving valuable space on the circuit board. The converters are IEC/EN-60950-1 certified and fully compliant to RoHS2 and REACH. Furthermore, the RP-xx06s series is safety certified to the latest UL/IEC60950 standard.
The converters are available from stock with input voltages of 5V, 12V, 15V or 24V at Rutronik24.com. Due to using only high quality name-brand components in their designs, RECOM offers a three-year warranty for the RP-xx06-series.
You will find more information on the RP-xx06 series from Recom on the e-commerce platform
Rutronik24.com (where you can also place orders directly):
Contact Person (Rutronik):
Axel Stangl, Product Sales Manager Power Semiconductors
Tel: +49 7231 801-0