By using the TO-247-4L package the driver and current source pins are separated, thus minimizing the effects of the parasitic inductance component. This contributes to a measurably lower power consumption, what is particularly interesting for high-performance applications where an uninterruptible power supply have to be provided. Especially with the growing demand for cloud services due to the advance of AI and IoT, data centers face the challenge of reducing power consumption while capacity and performance increase simultaneously.
The matching evaluation board (P02SCT3040KR-EVK-001) is equipped with gate driver ICs (BM6101FV-C), optimized for driving SiC devices. Multiple power supply ICs and discrete components facilitate application evaluation and development. Compatibility with both package types (TO-247-4L and TO-247N) allows evaluation under the same conditions. The board can be used for double pulse testing and component evaluation in boost circuits, 2-level inverters and synchronous rectification buck circuits.
For more information about Rohm‘s new SiC-MOSFETs and a direct ordering option, please visit our e-commerce platform at <link www.rutronik24.com/search-result/qs:TMOS2941%20%20TMOS3022%20%20TMOS3023%20%20TMOS3024 - external-link-new-window "open internal link">www.rutronik24.com</link>.
Wolfgang Sayer, Line Manager
+49 7231 801 1523 | <link Wolfgang.Sayer@rutronik.com - mail "open internal link">Wolfgang.Sayer@rutronik.com</link>