The main feature of the source-down package concept is the orientation of the active side of the silicon chip to the bottom of the component. Combined with the reinforced clip on the top of the silicon chip, package parasitics are significantly reduced while thermal performance is taken to the next level. State-of-the-art silicon technology with excellent FOM and maximized chip / package ratio increases current capability and ensures minimized power losses. Infineon's OptiMOS™ power MOSFETs enable fast switching and reduce the need for parallel switching of components.
Key functions at a glance
- Minimized line losses
- Reduced voltage overshoots
- Increased maximum current carrying capacity
- Fast switching
- Less parallel connection of components required
Examples of applications:
- Low voltage drives
- Light electric vehicles
- Electric tools
- Battery Management System
- Class D audio applications USB chargers
For more information to the OptiMOS™ Power MOSFETs from Infineon and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com.
Hannah Metzner | Corporate Product Manager Power | +49 7231 801 1551 | firstname.lastname@example.org