Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices provide the high bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs, or to serve as companion chips to burst NOR Flash applications. Therefore, they are ideally suited for wireless, automotive, networking, and industrial applications
The interfaces of the AS1C1M16PL-70BIN, AS1C1M16P-70BIN, AS1C2M16P-70BIN, AS1C512K16PL-70BIN and AS1C512K16P-70BIN are compatible with asynchronous type SRAMs. The AS1C4M16PL-70BIN and AS1C8M 16PL-70BIN CellularRAM PSRAMs feature a multiplexed address/data bus for greater bandwidth. All devices support asynchronous and burst operation and feature read or write burst lengths of 4, 8, 16, or 32 words as well as continuous burst.
Available in industrial temperature ranges (-30°C or -40°C to +85°C), the PSRAMs offer fast access speeds of 70ns and operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V. Additional power-saving features include auto temperature-compensated self-refresh (ATCSR), partial array self-refresh (PASR), and a deep power down (DPD) mode. The 48-ball FPBGA package comes with measurements of 6.0 mm x 7.0 mm x 1.0 mm, the 49-ball FPBGA package measures 4.0 mm x 4.0 mm x 1.0 mm.
Contact Person (Rutronik):
Isabell Weinlein, Product Sales Manager Memories
Tel: +49 7231 801 1719