23.02.12
STMicroelectronics- ST extends its silicon-carbide power diode range to 20 A to give high-power SMPS a boost
SiC Schottky diodes exhibit four times better dynamic characteristics and 15% less forward voltage drop than the fastest bipolar silicon diodes
This performance enables all types of converters to reach unequalled levels of efficiency, power density and switching frequencies. ST’s 600 V product portfolio now includes a 20 A diode, housed in a halogen-free TO-247 package, to extend its 4- to 12-amp offer. This high-current SiC diode is intended for PFCs, EV or HEV charging stations, solar inverters, and other applications such as welding equipment and air conditioners. More
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