23.02.12

STMicroelectronics- ST extends its silicon-carbide power diode range to 20 A to give high-power SMPS a boost

SiC Schottky diodes exhibit four times better dynamic characteristics and 15% less forward voltage drop than the fastest bipolar silicon diodes

This performance enables all types of converters to reach unequalled levels of efficiency, power density and switching frequencies. ST’s 600 V product portfolio now includes a 20 A diode, housed in a halogen-free TO-247 package, to extend its 4- to 12-amp offer. This high-current SiC diode is intended for PFCs, EV or HEV charging stations, solar inverters, and other applications such as welding equipment and air conditioners. More

More information about the RUTRONIK products including prices, stock and leadtime in our webgate.

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